国家/地区 日本（6）
IPC部 H（6） C（5） B（4）
IPC大类 H01（6） C01（5） B82（4）
C23（4） C30（3） H02（2）
IPC小类 H01L（6）
IPC C01B031/02（5） B82Y030/00（4） C01B031/04（4）
B82Y040/00（3） C30B029/02（3） H01L031/04（3）
B82B003/00（2） C01B032/188（2） H01B001/04（2）
H01L031/042（2）
发明人 VEERASAMY V（4） VEERASAMY V S（4）
公开年 2011（5）
申请年 2009（4） 
专利权人 GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4） VEERASAMY V .（2）

Electronic device e.g. organic thin-film transistor, photovoltaic cell, image scanner, memory device, useful for forming semiconducting layer on substrate comprises semiconducting layer containing organic semiconductor and graphene.

WU Y, HU N, LIU P, MAHABADI H K, SMITH P, BARANYI G, HU N X, SMITH P F

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Photovoltaic cell for producing electricity comprises contacts with electrically conductive materials, and graphite stack comprising vertically stacked semiconducting graphene sheets, where junctions form holes.

LAGALLY M, LIU F